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IGBT
Insulation Gate Bi-polar Transistor
Wafer with Back Metal Plating
Experimental use in Lab
For optimizing heat dissipation
EV (Electric Vehicle) and HEV (Hybrid Electric Vehicle)
 

Click for Questionnaire

 Quick Specs:
Wafer Material: Si, GaN and SiC
Die size 5mm to 25mm

Use and Applications:
Laboratory testing of IGBT Wafer and Die
Evaluation
Prototype
Optimization

Availability:
Stock to 4 weeks
 
Part Numbering System
PD - 12.5 - 150 - SiC - ###
Plated Die - Die
Size (mm)		 - Die
Thickness (µm)		 - Wafer
Material		 - ID
Number
PD=Plated Die
Without Bonding Pads

PDC=Plated Die
Daisy Chain
Wire Bonding Pads		 - 5.0mm ~
25mm		 - 100µm
~250µm		 - Blank = Si Silicon
GaN = Gallium Nitride
SiC = Silicon Carbide		 - Unique
Number
Notes: Customer must complete questionnaire specifying wafer requirements such as:
Wafer Material (Si, GaN or SiC), Wafer thickness (µm), Plating and Sputtering Alloys
Plating Thickness, Back Grind Mesh Number, back-face laser annealing, etc
Available Packaging:
WP2 = 2-inch Waffle Pack
WP4 = 4-inch Waffle Pack
NTR = Nitto Tape & Ring
 


IGBT Wafer/Die Questionnaire
 
Wafer Material: [ ] Si
Silicon		 [ ] GaN
Gallium Nitride		 [ ] SiC
Silicon Carbide		    
Die Size: ________ mm x

________ mm		        
Die Thickness: ________ µm        
Back Grind Mesh: [ ] #600 Other ________      
Layer 1:
(sputter)		 [ ] Ti Other ________ Layer 1
Thickness:		 [ ] 1000Å Other ________
Layer 2:
(sputter)		 [ ] Ni Other ________ Layer 2
Thickness:		 [ ] 1000Å Other ________
Layer 3:
(plating)		 [ ] Ni Other ________ Layer 3
Thickness:		 [ ] 2.0 ~ 5.0µm Other ________
Layer 4:
(plating)		 [ ] Au

[ ] Sn		 Other ________ Layer 4
Thickness:		 [ ] 0.1 ~ 0.3µm Other ________
Wire Bond Pad:
 [ ] None [ ] Daisy Chain Pad size

_____ x ______µm		 Nbr Pads

________		 Pad Pitch

________ µm
 
Related Links:
Wafer   Test Die   Dummy Die   Flip Chip  


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